Please use this identifier to cite or link to this item: http://dspace.msu.edu.ua:8080/jspui/handle/123456789/396
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dc.contributor.authorBletskan, D.I.-
dc.contributor.authorMadyar, J.J.-
dc.contributor.authorKabaciy, V.N.-
dc.contributor.authorКабацій, Василь Миколайович-
dc.date.accessioned2017-11-17T12:27:13Z-
dc.date.available2017-11-17T12:27:13Z-
dc.date.issued2006-
dc.identifier.urihttp://dspace.msu.edu.ua:8080/jspui/handle/123456789/396-
dc.descriptionBletskan, D. I. Effect of Nonstoichiometry and Doping on the Photoconductivity Spectra of GeSe Layered Crystals / D. I. Bletskan, J. J. Madyar, V. N. Kabaciy // Semiconductors. - 2006. - Vol.40. No 2. - P.142-147en_US
dc.description.abstractThe polarization photoconductivity spectra of Bi-doped nonstoichiometric GeSe layered crystals grown by static sublimation were investigated.en_US
dc.language.isoenen_US
dc.relation.ispartofseries;Vol.40, No 2-
dc.subjectNonstoichiometryen_US
dc.subjectDopingen_US
dc.subjectPhotoconductivity Spectraen_US
dc.subjectLayered Crystalsen_US
dc.titleEffect of Nonstoichiometry and Doping on the Photoconductivity Spectra of GeSe Layered Crystalsen_US
dc.typeArticleen_US
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