Photoelectric properties of ordered-vacancy Ga2Se3 single crystals

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Title:	Photoelectric properties of ordered-vacancy Ga2Se3 single crystals
Authors:	Bletskan, D. I. Блеткан, Д. І. Kabatsii, V. N. Кабацій, Василь Миколайович Kranjcec, M. Кранчець, М.
Keywords:	cation vacancy photoelectric property luminous flux thermally stimulate current native point defect вакансія катіона фотоелектрична властивість світловий потік термічно стимулюючий струм родний дефект
Issue Date:	2010
Publisher:	Pleiades Publishing
Abstract:	We have studied the photoconductivity spectrum, thermally stimulated current, current–light characteristics, and temperaturedependent photocurrent in Bridgmangrown orderedvacancy Ga2Se3 crystals. The observed temperature quenching of photoconductivity and two regions of its thermal activation in Ga2Se3 crystals are interpreted in terms of a multicenter recombination model which incorporates an schannel of active recombination, rcenters of photosensitivity, and traps for nonequilibrium majority carriers.
Description:	Bletskan D. I. Photoelectric properties of ordered-vacancy Ga2Se3 single crystals / D. I. Bletskan, V. N. Kabatsii, M. Kranjcec // Inorganic Materials, 2010, Vol. - 46, No. - 12, P.1290–1295
URI:	http://dspace.msu.edu.ua:8080/jspui/handle/123456789/6838
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