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dc.contributor.authorBletskan, Dmytro-
dc.contributor.authorKabatcii, Vasyl-
dc.contributor.authorКабацій, Василь Миколайович-
dc.date.accessioned2022-11-28T07:59:21Z-
dc.date.available2022-11-28T07:59:21Z-
dc.date.issued2019-
dc.identifier.urihttp://dspace.msu.edu.ua:8080/jspui/handle/123456789/9278-
dc.descriptionInfluence of Bi Impurity on the Electronic Structure and Photoelectric Properties of Germanium Monosulfide / D. Bletskan, V Kabatcii // XIth International Scientific and Practical Conference on Electronics and Information Technologies (ELIT). - September 16 – 18, 2019 Lviv, Ukraine. - Р. 232-237uk_UA
dc.description.abstractQuantum-chemical studies of GeS electronic structure containing isolated substitutional impurities BiGe and {VGe–BiGe}-type complexes were performed using density functional theory in the LDA+U-approximation as well as their role in the formation of photoelectric characteristics of the crystals was discussed. It was established that the localization of Bi impurity predominantly in the germanium positions induces the appearance of donor-type levels in the band gap compensating the acceptor levels formed by cation vacancies which leads to the increase of dark resistivity as well as the sharp increase of photosensitivity of GeS crystals. The features of chemical bonding in the defect-free and defective GeS crystals were analyzed on the basis of electronic density distribution maps. Electronic density maps clearly show the covalent-ionic bond nature within the corrugated double-layer packets with the predominant charge concentration on Ge–S (Bi–S) bonds as well as the weak van der Waals bond components between double-layer packets with the participation of germanium electronic lone pair.uk_UA
dc.language.isootheruk_UA
dc.publisherМукачево: МДУuk_UA
dc.subjectmonosulfideuk_UA
dc.subjectelectronic structureuk_UA
dc.subjectimpurity defectsuk_UA
dc.subjectphotoconductivityuk_UA
dc.subjectмоносульфідuk_UA
dc.subjectелектронна структураuk_UA
dc.subjectдомішкові дефектиuk_UA
dc.subjectфотопровідністьuk_UA
dc.titleInfluence of Bi Impurity on the Electronic Structure and Photoelectric Properties of Germanium Monosulfideuk_UA
dc.typeArticleuk_UA
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