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DC Field | Value | Language |
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dc.contributor.author | Bletskan, Dmytro | - |
dc.contributor.author | Kabatcii, Vasyl | - |
dc.contributor.author | Кабацій, Василь Миколайович | - |
dc.date.accessioned | 2022-11-28T07:59:21Z | - |
dc.date.available | 2022-11-28T07:59:21Z | - |
dc.date.issued | 2019 | - |
dc.identifier.uri | http://dspace.msu.edu.ua:8080/jspui/handle/123456789/9278 | - |
dc.description | Influence of Bi Impurity on the Electronic Structure and Photoelectric Properties of Germanium Monosulfide / D. Bletskan, V Kabatcii // XIth International Scientific and Practical Conference on Electronics and Information Technologies (ELIT). - September 16 – 18, 2019 Lviv, Ukraine. - Р. 232-237 | uk_UA |
dc.description.abstract | Quantum-chemical studies of GeS electronic structure containing isolated substitutional impurities BiGe and {VGe–BiGe}-type complexes were performed using density functional theory in the LDA+U-approximation as well as their role in the formation of photoelectric characteristics of the crystals was discussed. It was established that the localization of Bi impurity predominantly in the germanium positions induces the appearance of donor-type levels in the band gap compensating the acceptor levels formed by cation vacancies which leads to the increase of dark resistivity as well as the sharp increase of photosensitivity of GeS crystals. The features of chemical bonding in the defect-free and defective GeS crystals were analyzed on the basis of electronic density distribution maps. Electronic density maps clearly show the covalent-ionic bond nature within the corrugated double-layer packets with the predominant charge concentration on Ge–S (Bi–S) bonds as well as the weak van der Waals bond components between double-layer packets with the participation of germanium electronic lone pair. | uk_UA |
dc.language.iso | other | uk_UA |
dc.publisher | Мукачево: МДУ | uk_UA |
dc.subject | monosulfide | uk_UA |
dc.subject | electronic structure | uk_UA |
dc.subject | impurity defects | uk_UA |
dc.subject | photoconductivity | uk_UA |
dc.subject | моносульфід | uk_UA |
dc.subject | електронна структура | uk_UA |
dc.subject | домішкові дефекти | uk_UA |
dc.subject | фотопровідність | uk_UA |
dc.title | Influence of Bi Impurity on the Electronic Structure and Photoelectric Properties of Germanium Monosulfide | uk_UA |
dc.type | Article | uk_UA |
Appears in Collections: | Статті |
Files in This Item:
File | Description | Size | Format | |
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Bi _Impurity_ on _the_ Electronic _Structure_ and _Photoelectric _Properties_ of _Germanium _Monosulfide.pdf | Influence of Bi Impurity on the Electronic Structure and Photoelectric Properties of Germanium Monosulfide | 4.59 MB | Adobe PDF | View/Open |
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